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Thin-film modeling


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I can read in the user's guide the following statement regarding the modeling of TF modules (July 2002 update).

"The main novelty is the special tools for the treatment ofThin film technology modules (a-SI:H, with tandem or tripple junctions, CIS, CdTe). Up to now the program used the standard one-diode model, although it is not well-suited for these technologies. There is no consensus up to now in the PV community on how to model these devices."

After more than 10 years, what is the actual status for such a modeling? Is it still difficult to model thin film with respect to crystalline?

Thank you for your help

Christophe Vernay

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Yes it is still difficult.

I have established a model (i.e identified 3 main modifications of the standard one-diode model) which works quite well, and matches the real modules behaviour with a very good accuracy.

The problem when using this model in PVsyst is to find the good parameters, as the information provided by the manufacturers is usually not sufficient.

However the default parameters proposed by PVsyst seem to give good results.

See my paper Performance Assessment of a simulation model for PV modulesof any available rechnology, ( 25th EPVSEC – Valencia, 2010), available on our site http://www.pvsyst.com.

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