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How muPmax is calculated from the one-diode model?


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How does the temperature dependence of the diode saturation current in the one-diode model allow PVsyst to solve/fix muPmax? Does the model calculate Pmax first at a given temperature then find the corresponding muPmax from the reference Pmax? Or does the model calculate muPmax first and then apply it to find Pmax?

Io(T) = Io ref ( Tc / Tc ref )3 · exp [ ( q · EGap / Gamma · k) · ( 1 / Tc ref - 1 / Tc ) ]

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