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Band Gap (eV) for mtHIT modules

Luiz Reis

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We know that for mtSiMono and mtSiPoly modules we use a band gap of 1.12 eV to calculate the operating point using the single-diode model. For mTHit modules does PVSyst also use the conventional single-diode model? If so, what band gap (eV) value should be used in the single-diode model for mtHIT technology modules?

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