cq.trac Posted August 23, 2019 Posted August 23, 2019 Hello All,Does anyone know what parameter in a .pan file would cause a linear vs non-linear behaviour in the max power point of a module vs temperature in the one-diode model calculated by PVsyst? I have 3 modules from the same manufacturer that behave differently, 2 modules will have a linear behaviour and their maximum power point will increase with a decrease in temperature. The last one will behave linearly up to a point (about -10C), and then its power will start decreasing with temperature instead of increasing. I've checked a few more .pan files and about 45% of them have this non-linear behavior as well, all starting to decrease in power at around -10C.Does anyone know how PVSysts decides to correct for temperature in a linear vs non-linear way? I looked at the .pan files, but no parameter really stood out that might isolate the modules with a non-linear performance, so I assume it might not have to do with the .pan file parameters and have more to do with PVSysts methods of correcting for temperature. If anyone has a potential answer to this, I'd greatly appreciate an explanationThanks,
André Mermoud Posted August 29, 2019 Posted August 29, 2019 This is an artefact of the one-diode model. For numeric reasons, I had to limit the Diode Saturation current at a threshold value of 0.01 pA. When limiting to this value, the muPmpp becomes positive. This arises at very low temperatures, when you define a Rseries value close to its maximum RSMax.I judged that below -10°C, this remains acceptable. By the way even if the muPmpp becomes positive the one-diode model still works correctly. Simply the Pmpp doesn't increase anymore when going towards lower temperatures.
kjs55 Posted July 26, 2021 Posted July 26, 2021 Hi, Would you please confirm the minimum diode saturation current at reference conditions I0Ref is 0.01 pA and not 0.01 nA or 0.001 nA? I only ask because it appears the minimum value of I0Ref displayed in the PVsyst .PAN file graphical user interface GUI is 0.010 nA. (I may have seen a lower value of 0.008 nA for CdTe.) Is it the same PVsyst-imposed limit for all PV cell technologies? Thank you.
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