PVsyst's forumhttps://forum.pvsyst.com/ Understanding Mismatch Detailed Conputation.https://forum.pvsyst.com/viewtopic.php?f=25&t=5536 Page 1 of 1

 Author: psmith [ Tue Sep 21, 2021 9:26 pm ] Post subject: Understanding Mismatch Detailed Conputation. I am a newbie on this . I was trying to understand few things on detailed computation of mismatch (Loss section that uses RMS of Voc and Isc). As I am seeing the help section , the IV curves are based on single diode model that has following parameters : I = Current supplied by the module [A].- Unknown V = Voltage at the terminals of the module [V].- Unknown IphRef = Photocurrent [A] IoRef = diode inverse saturation current [A] Rs = Series resistance [ohm]. Rsh = Shunt resistance [ohm]. Gamma= Diode quality factor, theoretically between 1 and 2, often less q = Charge of the electron = 1.602·E-19 Coulomb k = Bolzmann's constant = 1.381 E-23 J/K. Ncs = Number of cells in series. Tc = Effective temperature of the cells [Kelvin] As I understand we get IV curves from this equation .Now looking at the detailed computation, It uses RMS values of Voc and Isc and obtains statistical sample of Voc and Isc . It then uses them in generating IV curves after aligning Voc and Isc (summing etc) . But, As I see the single diode equation has these two parameters as unknown that is calculated from the photocurrent IphRef. I am not able to relate this part . How we are generating the new IV curves from the statistical sample . Are we using this same single diode equation to generate IV curves here or some more info is there? Or I am interpreting things incorrectly ??